NCE6008AS - N-Channel Enhancement Mode Power MOSFET

NCE Power

Datasheet Details

Part number	NCE6008AS
Manufacturer	NCE Power
File Size	390.12 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE6008AS-NCEPower.pdf

The NCE6008AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

VDS = 60V,ID =8A RDS(ON) < 20mΩ @ VGS=10V (Typ:15.6mΩ) RDS(ON) < 28mΩ @ VGS=4.5V (Typ:20mΩ).
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Low gate to drain charge to reduce switching losses Schematic diagram.

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Published: Nov 8, 2024 |