NCE6007S Datasheet, Mosfet, NCE Power Semiconductor

NCE6007S Features

• Mosfet
• VDS =60V,ID =7A RDS(ON) < 30mΩ @ VGS=10V （Typ：24mΩ） RDS(ON) < 35mΩ @ VGS=4.5V （Typ：27mΩ）
• High density cell design for ultra low Rdson
• Fully characterized a

PDF File Details

Part number:

NCE6007S

Manufacturer:

NCE Power Semiconductor

File Size:

412.44kb

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📄 Datasheet

Description:

N-channel enhancement mode power mosfet. The NCE6007S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide v

NCE6007S Application

• Applications General Features
• VDS =60V,ID =7A RDS(ON) < 30mΩ @ VGS=10V （Typ：24mΩ） RDS(ON) < 35mΩ @ VGS=4.5V （Typ：27mΩ）
• High de

TAGS

NCE6007S

NCE Power Semiconductor

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