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NCE6007S N-Channel Enhancement Mode Power MOSFET

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Description

http://www.ncepower.com Pb Free Product NCE6007S NCE N-Channel Enhancement Mode Power MOSFET .
The NCE6007S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

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Datasheet Specifications

Part number
NCE6007S
Manufacturer
NCE Power Semiconductor
File Size
412.44 KB
Datasheet
NCE6007S-NCEPowerSemiconductor.pdf
Description
N-Channel Enhancement Mode Power MOSFET

Features

* VDS =60V,ID =7A RDS(ON) < 30mΩ @ VGS=10V (Typ:24mΩ) RDS(ON) < 35mΩ @ VGS=4.5V (Typ:27mΩ)
* High density cell design for ultra low Rdson
* Fully characterized avalanche voltage and current

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