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NCE6007S - N-Channel Enhancement Mode Power MOSFET

NCE Power Semiconductor

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Datasheet Details

Part number	NCE6007S
Manufacturer	NCE Power Semiconductor
File Size	412.44 KB
Description	N-Channel Enhancement Mode Power MOSFET
Datasheet	NCE6007S-NCEPowerSemiconductor.pdf

NCE6007S Product details

Description

The NCE6007S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

Features

VDS =60V,ID =7A RDS(ON) < 30mΩ @ VGS=10V （Typ：24mΩ） RDS(ON) < 35mΩ @ VGS=4.5V （Typ：27mΩ）.
High density cell design for ultra low Rdson.
Fully characterized avalanche voltage and current.
Low gate to drain charge to reduce switching losses Schematic diagram.

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Published: Jun 2, 2018 |