* Ideal for low noise, high-gain amplification NF = 0.9 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
* Maximum stable power gain: MSG = 20.0 dB TYP. @ VCE = 2 V, IC = 20 mA, f = 2 GHz
* SiGe technology (fT = 60 GHz, fmax = 60 GHz)
* 6-pin lead-less minimold (M16, 1208 pa
2SC5843
NEC
50.54 KB
Npn sige rf transistor.
DATA SHEET
NPN SILICON GERMANIUM RF TRANSISTOR
2SC5843
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 12.
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