2SJ132 Datasheet - NEC

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2SJ132 MOS FIELD EFFECT POWER TRANSISTORS

DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ132, 2SJ132-Z P-CHANNEL POWER MOS FET FOR SWITCHING .
of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and ap.

2SJ132-NEC.pdf

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Datasheet Details

Part number:

2SJ132

Manufacturer:

NEC

File Size:

130.29 KB

Description:

MOS FIELD EFFECT POWER TRANSISTORS

Features

* Gate drive available at logic level (VGS =
* 4 V)
* High current control available in small dimension due to low RDS(on) (≅ 0.25 Ω)
* 2SJ132-Z is a lead process product and is deal for mounting a hybrid IC. QUALITY GRADES
* Standard Please refer to “Quality G

Applications

* ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Symbol Conditions Drain to source voltage VDSS VGS = 0 Gate to source voltage VGSS VDS = 0 Drain current (DC) ID(DC) TC = 25°C Drain current (pulse) ID(pulse) PW ≤ 300 µs duty cycle ≤ 10 % Total power dissipation PT TC = 25°C Total p

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2SJ132 MOS FIELD EFFECT POWER TRANSISTORS NEC

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