Part number:
2SJ132
Manufacturer:
NEC
File Size:
130.29 KB
Description:
Mos field effect power transistors.
* Gate drive available at logic level (VGS =
* 4 V)
* High current control available in small dimension due to low RDS(on) (≅ 0.25 Ω)
* 2SJ132-Z is a lead process product and is deal for mounting a hybrid IC. QUALITY GRADES
* Standard Please refer to “Quality G
2SJ132
NEC
130.29 KB
Mos field effect power transistors.
📁 Related Datasheet
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(Hitachi Semiconductor)
2SJ130(L), 2SJ130(S)
Silicon P-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low .
2SJ130L - P-Channel MOSFET
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2SJ130(L), 2SJ130(S)
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Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low .
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High speed power switching
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• • • • • Low on-resistance High speed switching Low .
2SJ132-Z - MOS FIELD EFFECT POWER TRANSISTORS
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DATA SHEET
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FEATURES • Gate drive available at logic level (.
2SJ133 - MOSFET
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