2SJ132 Datasheet - NEC

2SJ132 MOS FIELD EFFECT POWER TRANSISTORS

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full r.

2SJ132 Features

* Gate drive available at logic level (VGS =

* 4 V)

* High current control available in small dimension due to low RDS(on) (≅ 0.25 Ω)

* 2SJ132-Z is a lead process product and is deal for mounting a hybrid IC. QUALITY GRADES

* Standard Please refer to “Quality G

2SJ132-NEC.pdf