2SJ104 Datasheet - Toshiba Semiconductor

2SJ104 P-Channel MOSFET

TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ104 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 2SJ104 Unit: mm High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V) Low RDS (ON) = 40 Ω (typ.) (IDSS = 5 mA) Complimentary to 2SK364 Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tst.

2SJ104_ToshibaSemiconductor.pdf