TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ107 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 2SJ107 Unit: mm High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V) Low RDS (ON): RDS (ON) = 40 Ω (typ.) Small package Complementary to 2SK366 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Gate-drain voltage Gate current Drain power dissipation Junction temperat
2SJ107_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
2SJ107
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
617.33 KB
Description:
P-channel mosfet.