2SJ107 Datasheet - Toshiba Semiconductor

2SJ107 P-Channel MOSFET

TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ107 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 2SJ107 Unit: mm High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V) Low RDS (ON): RDS (ON) = 40 Ω (typ.) Small package Complementary to 2SK366 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Gate-drain voltage Gate current Drain power dissipation Junction temperat.

2SJ107_ToshibaSemiconductor.pdf