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2SJ106 Datasheet - Toshiba Semiconductor

2SJ106 - P-Channel MOSFET

2SJ106 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ106 Audio Frequency Amplifier Applications Analog Switch Applications Constant Current Applications Impedance Converter Applications Unit: mm High breakdown voltage: VGDS = 50 V High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V) Low RDS (ON): RDS (ON) = 270 Ω (typ.) (IDSS = 5 mA) Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage

2SJ106_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SJ106

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

523.46 KB

Description:

P-channel mosfet.

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