2SJ106 Datasheet - Toshiba Semiconductor

2SJ106 P-Channel MOSFET

2SJ106 TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ106 Audio Frequency Amplifier Applications Analog Switch Applications Constant Current Applications Impedance Converter Applications Unit: mm High breakdown voltage: VGDS = 50 V High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V) Low RDS (ON): RDS (ON) = 270 Ω (typ.) (IDSS = 5 mA) Small package Absolute Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage .

2SJ106_ToshibaSemiconductor.pdf