2SJ103 Datasheet - Toshiba Semiconductor

2SJ103 P-Channel MOSFET

TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ103 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 2SJ103 Unit: mm High breakdown voltage: VGDS = 50 V High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V) Low RDS (ON): RDS (ON) = 270 Ω (typ.) (IDSS = 5 mA) Complimentary to 2SK246 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Gate-drain voltage Gate cur.

2SJ103_ToshibaSemiconductor.pdf