2SJ103 Datasheet - Toshiba Semiconductor

2SJ103, P-Channel MOSFET

TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ103 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Ap.

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2SJ103_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SJ103

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

264.38 KB

Description:

P-Channel MOSFET

Applications

* 2SJ103 Unit: mm
* High breakdown voltage: VGDS = 50 V
* High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V)
* Low RDS (ON): RDS (ON) = 270 Ω (typ. ) (IDSS =
* 5 mA)
* Complimentary to 2SK246 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Ra

2SJ103 Distributors

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2SJ103 P-Channel MOSFET Toshiba Semiconductor

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