TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ105 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Applications 2SJ105 Unit: mm High breakdown voltage: VGDS = 50 V High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V) Low RDS (ON): RDS (ON) = 270 Ω (typ.) (IDSS = 5 mA) Complimentary to 2SK330 Small package Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation
2SJ105_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
2SJ105
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
151.30 KB
Description:
P-channel mosfet.