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2SJ105 - P-Channel MOSFET

2SJ105 Description

TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ105 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Ap.

2SJ105 Applications

* 2SJ105 Unit: mm
* High breakdown voltage: VGDS = 50 V
* High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V)
* Low RDS (ON): RDS (ON) = 270 Ω (typ. ) (IDSS =
* 5 mA)
* Complimentary to 2SK330
* Small package Maximum Ratings (Ta = 25°C) Characteristics Gate-drain volta

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P-Channel MOSFET Toshiba Semiconductor
Toshiba Semiconductor 2SJ105-like datasheet