2SJ105 Datasheet - Toshiba Semiconductor

datasheet Preview Page 1 from Datasheet4u.com

2SJ105 P-Channel MOSFET

TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ105 For Audio Amplifier, Analog Switch, Constant Current and Impedance Converter Ap.

2SJ105_ToshibaSemiconductor.pdf

2SJ105 Datasheet Preview — Preview of 2SJ105 PDF

Datasheet Details

Part number:

2SJ105

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

151.30 KB

Description:

P-Channel MOSFET

Applications

* 2SJ105 Unit: mm
* High breakdown voltage: VGDS = 50 V
* High input impedance: IGSS = 1.0 nA (max) (VGS = 30 V)
* Low RDS (ON): RDS (ON) = 270 Ω (typ. ) (IDSS =
* 5 mA)
* Complimentary to 2SK330
* Small package Maximum Ratings (Ta = 25°C) Characteristics Gate-drain volta

2SJ105 Distributors

📁 Related Datasheet

2SJ111 2SJ112 2SJ113 2SJ114 2SJ115 2SJ116

📌 All Tags

2SJ105 P-Channel MOSFET Toshiba Semiconductor

Toshiba Semiconductor 2SJ105-like datasheet