2SJ108 Datasheet - Toshiba Semiconductor

2SJ108 P-Channel MOSFET

TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ108 2SJ108 Low Noise Audio Amplifier Applications Unit: mm Recommended for first stages of EQ amplifiers and MC head amplifiers. High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = 10 V, VGS = 0, IDSS = 3 mA) Low noise: En = 0.95 nV/Hz1/2 (typ.) (VDS = 10 V, ID = 1 mA, f = 1 kHz) High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V) Complementary to 2SK370 Small pac.

2SJ108 Datasheet (178.39 KB)