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2SJ108 - P-Channel MOSFET

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Part number 2SJ108
Manufacturer Toshiba Semiconductor
File Size 178.39 KB
Description P-Channel MOSFET
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TOSHIBA Field Effect Transistor Silicon P Channel Junction Type 2SJ108 2SJ108 Low Noise Audio Amplifier Applications Unit: mm · Recommended for first stages of EQ amplifiers and MC head amplifiers. · High |Yfs|: |Yfs| = 22 mS (typ.) (VDS = −10 V, VGS = 0, IDSS = −3 mA) · Low noise: En = 0.95 nV/Hz1/2 (typ.) (VDS = −10 V, ID = −1 mA, f = 1 kHz) · High input impedance: IGSS = 1.0 nA (max) (VGS = 25 V) · Complementary to 2SK370 · Small package Maximum Ratings (Ta = 25°C) Characteristics Gate-drain voltage Gate current Drain power dissipation Junction temperature Storage temperature range Symbol VGDS IG PD Tj Tstg Rating 25 -10 200 125 -55~125 Electrical Characteristics (Ta = 25°C) Unit V mA mW °C °C JEDEC ― JEITA ― TOSHIBA 2-4E1C Weight: 0.13 g (typ.
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