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2SJ132-Z, 2SJ132 - MOS FIELD EFFECT POWER TRANSISTORS

2SJ132-Z Description

DATA SHEET MOS FIELD EFFECT POWER TRANSISTORS 2SJ132, 2SJ132-Z P-CHANNEL POWER MOS FET FOR SWITCHING .
of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and ap.

2SJ132-Z Features

* Gate drive available at logic level (VGS =
* 4 V)
* High current control available in small dimension due to low RDS(on) (≅ 0.25 Ω)
* 2SJ132-Z is a lead process product and is deal for mounting a hybrid IC. QUALITY GRADES
* Standard Please refer to “Quality G

2SJ132-Z Applications

* ABSOLUTE MAXIMUM RATINGS (Ta = 25°C) Parameter Symbol Conditions Drain to source voltage VDSS VGS = 0 Gate to source voltage VGSS VDS = 0 Drain current (DC) ID(DC) TC = 25°C Drain current (pulse) ID(pulse) PW ≤ 300 µs duty cycle ≤ 10 % Total power dissipation PT TC = 25°C Total p

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: 2SJ132-Z, 2SJ132. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
2SJ132-Z, 2SJ132
Manufacturer
NEC
File Size
130.29 KB
Datasheet
2SJ132-NEC.pdf
Description
MOS FIELD EFFECT POWER TRANSISTORS
Note
This datasheet PDF includes multiple part numbers: 2SJ132-Z, 2SJ132.
Please refer to the document for exact specifications by model.

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MOS FIELD EFFECT POWER TRANSISTORS NEC
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