* Capable of drive gate with 1.5 V
* Small RDS(on) RDS(on) = 0.7 Ω MAX. @VGS = 1.5 V, ID = 0.1 A RDS(on) = 0.3 Ω MAX. @VGS = 4.0 V, ID = 1.0 A 0.47 1.5 ± 0.06 3.0 0.42 ± 0.06 0.41+0.03
* 0.05 EQUIVALENT CIRCUIT 2 3 Gate protection diode 1 Internal diode PIN CONNECTION 1
2SK2159
NEC
62.31 KB
N-channel mos fet.
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2159 N-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING The 2SK2159 is an N-channel vertical type MOS FET featuri.
📁 Related Datasheet
2SK215 Silicon N-Channel MOS FET (Hitachi Semiconductor)
2SK215 N-Channel MOSFET (Renesas Technology)
2SK2150 N-Channel MOSFET Transistor (Inchange Semiconductor)
2SK2150 N-Channel MOSFET (Toshiba Semiconductor)
2SK2151 N-Channel Silicon MOSFET (Sanyo Semicon Device)
2SK2152 N-Channel Silicon MOSFET (Sanyo Semicon Device)
2SK2154 N-Channel Silicon MOSFET (Sanyo Semicon Device)
2SK2157 N-CHANNEL MOS FET (NEC)
2SK2157C N-CHANNEL MOSFET (Renesas)
2SK2158 N-CHANNEL MOS FET (NEC)
