* Low on-state resistance 5 5 5 RDS(on)1 = 30 mΩ MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 40 mΩ MAX. (VGS = 4.5 V, ID = 18 A)
* Low Ciss: Ciss = 3200 pF TYP.
* Built-in gate protection diode
* Isolated TO-220 package (Isolated TO-220) ABSOLUTE MAXIMUM RATINGS (TA = 25
2SK3360
NEC
40.48 KB
N-channel mosfet.
PRELIMINARY DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3360
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
ORDERING INFORMATION
PART NUMBER 2SK3360.
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PRELIMINARY DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3361
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
ORDERING INFORMATION
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VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at V.
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(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3366
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DESCRIPTION
The 2SK3366 is N-Channel MOS Field Effec.
