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2SK3360 - N-Channel MOSFET

2SK3360 Description

PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3360 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3360.
The 2SK3360 is N-Channel MOS Field Effect Transistor designed for high current switching application. Low on-state resistance 5 5.

2SK3360 Features

* Low on-state resistance 5 5 5 RDS(on)1 = 30 mΩ MAX. (VGS = 10 V, ID = 18 A) RDS(on)2 = 40 mΩ MAX. (VGS = 4.5 V, ID = 18 A)
* Low Ciss: Ciss = 3200 pF TYP.
* Built-in gate protection diode
* Isolated TO-220 package (Isolated TO-220) ABSOLUTE MAXIMUM RATINGS (TA = 25

2SK3360 Applications

* of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic

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Datasheet Details

Part number
2SK3360
Manufacturer
NEC
File Size
40.48 KB
Datasheet
2SK3360_NEC.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET NEC
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