Datasheet Details
- Part number
- 2SK3365
- Manufacturer
- NEC
- File Size
- 63.53 KB
- Datasheet
- 2SK3365_NEC.pdf
- Description
- N-Channel MOSFET
2SK3365 Description
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3365 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE .
The 2SK3365 is N-Channel MOS Field Effect Transistor designed for DC/DC converters application of notebook computers.
2SK3365 Features
* Low on-resistance RDS(on)1 = 14 mΩ (MAX. ) (VGS = 10 V, ID = 15 A) RDS(on)2 = 21 mΩ (MAX. ) (VGS = 4.5 V, ID = 15 A) RDS(on)3 = 29 mΩ (MAX. ) (VGS = 4.0 V, ID = 15 A)
* Low Ciss : Ciss = 1300 pF (TYP. )
* Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Dra
2SK3365 Applications
* of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic
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