2SK3365 - N-Channel MOSFET
2SK3365 Features
* Low on-resistance RDS(on)1 = 14 mΩ (MAX.) (VGS = 10 V, ID = 15 A) RDS(on)2 = 21 mΩ (MAX.) (VGS = 4.5 V, ID = 15 A) RDS(on)3 = 29 mΩ (MAX.) (VGS = 4.0 V, ID = 15 A)
* Low Ciss : Ciss = 1300 pF (TYP.)
* Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Dra
