* Low on-state resistance RDS(on)1 = 20 mΩ MAX. (VGS = 10 V, ID = 20 A) RDS(on)2 = 28 mΩ MAX. (VGS = 4.5 V, ID = 20 A) 5
* Low Ciss: Ciss = 4900 pF TYP.
* Built-in gate protection diode
* Isolated TO-220 package (Isolated TO-220) ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
2SK3361
NEC
40.75 KB
N-channel mosfet.
PRELIMINARY DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3361
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
ORDERING INFORMATION
PART NUMBER 2SK3361.
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PRELIMINARY DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3360
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
ORDERING INFORMATION
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VDS (V) RDS(on) () at VGS = 10 V RDS(on) () at V.
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2SK3366 - N-Channel MOSFET
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3366
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK3366 is N-Channel MOS Field Effec.
