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K2140 - N-Channel Power MOSFET

Datasheet Summary

Description

Transistor designed for high voltage switching applications.

Features

  • Low On-state Resistance RDS(on) = 1.5 Ω MAX. (VGS = 10 V, ID = 3.5 A).
  • Low Ciss Ciss = 930 pF TYP.
  • High Avalanche Capability Ratings.

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Datasheet preview – K2140

Datasheet Details

Part number K2140
Manufacturer NEC
File Size 98.76 KB
Description N-Channel Power MOSFET
Datasheet download datasheet K2140 Datasheet
Additional preview pages of the K2140 datasheet.

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Full PDF Text Transcription

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2140, 2SK2140-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2140, 2SK2140-Z is N-channel Power MOS Field Effect Transistor designed for high voltage switching applications. FEATURES • Low On-state Resistance RDS(on) = 1.5 Ω MAX. (VGS = 10 V, ID = 3.5 A) • Low Ciss Ciss = 930 pF TYP. • High Avalanche Capability Ratings ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage VDSS 600 V Gate to Source Voltage VGSS ±30 V Drain Current (DC) ID(DC) ±7.0 A Drain Current (pulse)* ID(pulse) ±28 A Total Power Dissipation (Tc = 25 ˚C) PT1 75 W Total Power Dissipation (TA = 25 ˚C) PT2 1.5 W Storage Temperature Tstg –55 to +150 ˚C Channel Temperature Tch 150 ˚C Single Avalanche Current** IAS 7.
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