NE67383
NEC
109.51kb
(ne67300 / ne67383) low noise ku-k band gaas mesfet for hi rel applications only. The NE673 features a low noise figure and high associated gain through K-band by employing a recessed 0.3 micron gate and triple epit
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NE67300 - (NE67300 / NE67383) LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY
(NEC)
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LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY
FEATURES
• VERY HIGH fMAX: 100 GHz
Optimum Noise Figure, NFOPT (dB)
.
NE67400 - (NE67400 / NE67483B) NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET
(CEL)
..
NEC's L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET
FEATURES
• LOW NOISE FIGURE: NF = 1.4 dB TYP at f = at 12 GHz
Noise .
NE67483B - (NE67400 / NE67483B) NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET
(CEL)
..
NEC's L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET
FEATURES
• LOW NOISE FIGURE: NF = 1.4 dB TYP at f = at 12 GHz
Noise .
NE677M04 - NECs MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
(CEL)
..
NEC's MEDIUM POWER NPN SILICON HIGH FREQUENCY NE677M04 TRANSISTOR
FEATURES
• • • • HIGH GAIN BANDWIDTH: fT = 15 GHz HIGH OUTPUT P.
NE678M04 - MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
(NEC)
..
MEDIUM POWER NPN SILICON NE678M04 HIGH FREQUENCY TRANSISTOR
FEATURES
• • • • HIGH GAIN BANDWIDTH: fT = 12 GHz HIGH OUTPUT POWER: .
NE678M04 - NPN SILICON RF TRANSISTOR
(CEL)
NPN SILICON RF TRANSISTOR
NE678M04
/
2SC5753
JEITA Part No.
NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW)
FLAT-LEAD 4-P.
NE600 - 1GHz LNA and mixer
(NXP Semiconductors)
Philips Semiconductors
Product specification
1GHz LNA and mixer
NE/SA600
DESCRIPTION
The NE/SA600 is a bined low noise amplifier (LNA) and mixe.
NE602 - NE602
(ETC)
http://..
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NE602 - Double-Balanced Mixer and Oscillator
(Philips)
NEjSA602
Double-Balanced Mixer and Oscillator
Product Specification
DESCRIPTION
The SA/NE602 is a low-power VHF monolithic double-balanced mixer with.
NE602A - Double-Balanced Mixer and Oscillator
(Philips)
.