NE678M04 Datasheet - NEC

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NE678M04 MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR

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The NE678M04 is fabricated using NEC's HFT3 wafer process.

NE678M04_NEC.pdf

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Datasheet Details

Part number:

NE678M04

Manufacturer:

NEC

File Size:

89.36 KB

Description:

MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR

Features

* HIGH GAIN BANDWIDTH: fT = 12 GHz HIGH OUTPUT POWER: P-1dB = 18 dBm at 1.8 GHz HIGH LINEAR GAIN: GL = 13 dB at 1.8 GHz NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance +0.40-0.05 2 +0.30

Applications

* from 100 MHz to 3 GHz. The NE678M04 provides P1dB of 18 dBm, even with low voltage and low current, making this device an excellent choice for the driver stage for mobile or fixed wireless applications. The NE678M04 is housed in NEC's new low profile/flat lead style "M04" package 1 +0.30-0.05 (lea

NE678M04 Distributors

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NE678M04 MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR NEC

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