NE678M04 Datasheet - NEC

NE678M04 MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR

The NE678M04 is fabricated using NEC's HFT3 wafer process. With a transition frequency of 12 GHz, the NE678M04 is usable in applications from 100 MHz to 3 GHz. The NE678M04 provides P1dB of 18 dBm, even with low voltage and low current, making this device an excellent choice for the driver stage for.

NE678M04 Features

* HIGH GAIN BANDWIDTH: fT = 12 GHz HIGH OUTPUT POWER: P-1dB = 18 dBm at 1.8 GHz HIGH LINEAR GAIN: GL = 13 dB at 1.8 GHz NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance +0.40-0.05 2 +0.30

NE678M04_NEC.pdf

NE678M04 Datasheet Preview — Preview of NE678M04 PDF

Datasheet Details

Part number:

NE678M04

Manufacturer:

NEC

File Size:

89.36 KB

Description:

Medium power npn silicon high frequency transistor.

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NE678M04 NE678M04 MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR NEC

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