NE678M04 Datasheet - NEC

MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR

NE678M04 Features

* HIGH GAIN BANDWIDTH: fT = 12 GHz HIGH OUTPUT POWER: P-1dB = 18 dBm at 1.8 GHz HIGH LINEAR GAIN: GL = 13 dB at 1.8 GHz NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance +0.40-0.05 2 +0.30

NE678M04 General Description

The NE678M04 is fabricated using NEC's HFT3 wafer process. With a transition frequency of 12 GHz, the NE678M04 is usable in applications from 100 MHz to 3 GHz. The NE678M04 provides P1dB of 18 dBm, even with low voltage and low current, making this device an excellent choice for the driver stage for.

NE678M04 Datasheet (89.36 KB)

NE678M04 Datasheet Preview — Preview of NE678M04 PDF

Datasheet Details

Part number:

NE678M04

Manufacturer:

NEC

File Size:

89.36 KB

Description:

Medium power npn silicon high frequency transistor.

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NE678M04 MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR NEC

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NE678M04 Features

NE678M04 General Description

Datasheet Details

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