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NE678M04 MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR

NE678M04 Description

www.DataSheet4U.com MEDIUM POWER NPN SILICON NE678M04 HIGH FREQUENCY TRANSISTOR .
The NE678M04 is fabricated using NEC's HFT3 wafer process.

NE678M04 Features

* HIGH GAIN BANDWIDTH: fT = 12 GHz HIGH OUTPUT POWER: P-1dB = 18 dBm at 1.8 GHz HIGH LINEAR GAIN: GL = 13 dB at 1.8 GHz NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance +0.40-0.05 2 +0.30

NE678M04 Applications

* from 100 MHz to 3 GHz. The NE678M04 provides P1dB of 18 dBm, even with low voltage and low current, making this device an excellent choice for the driver stage for mobile or fixed wireless applications. The NE678M04 is housed in NEC's new low profile/flat lead style "M04" package 1 +0.30-0.05 (lea

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Datasheet Details

Part number
NE678M04
Manufacturer
NEC
File Size
89.36 KB
Datasheet
NE678M04_NEC.pdf
Description
MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR

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MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR NEC
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