NE678M04 Datasheet, Transistor, NEC

NE678M04 Features

• Transistor
• HIGH GAIN BANDWIDTH: fT = 12 GHz HIGH OUTPUT POWER: P-1dB = 18 dBm at 1.8 GHz HIGH LINEAR GAIN: GL = 13 dB at 1.8 GHz NEW LOW PROFILE M04 PACKAGE

PDF File Details

Part number:

NE678M04

Manufacturer:

NEC

File Size:

89.36kb

Download:

📄 Datasheet

Description:

Medium power npn silicon high frequency transistor. The NE678M04 is fabricated using NEC's HFT3 wafer process. With a transition frequency of 12 GHz, the NE678M04 is usable in applicati

NE678M04 Application

• Applications from 100 MHz to 3 GHz. The NE678M04 provides P1dB of 18 dBm, even with low voltage and low current, making this device an excellent cho

TAGS

NE678M04

NEC

📁 Related Datasheet

NE678M04 - NPN SILICON RF TRANSISTOR (CEL)
NPN SILICON RF TRANSISTOR NE678M04 / 2SC5753 JEITA Part No. NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION (60 mW) FLAT-LEAD 4-P.

NE67300 - (NE67300 / NE67383) LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY (NEC)
.. LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY FEATURES • VERY HIGH fMAX: 100 GHz Optimum Noise Figure, NFOPT (dB) .

NE67383 - (NE67300 / NE67383) LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY (NEC)
.. LOW NOISE Ku-K BAND GaAs MESFET FOR HI REL APPLICATIONS ONLY FEATURES • VERY HIGH fMAX: 100 GHz Optimum Noise Figure, NFOPT (dB) .

NE67400 - (NE67400 / NE67483B) NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET (CEL)
.. NEC's L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET FEATURES • LOW NOISE FIGURE: NF = 1.4 dB TYP at f = at 12 GHz Noise .

NE67483B - (NE67400 / NE67483B) NECs L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET (CEL)
.. NEC's L TO Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAS MESFET FEATURES • LOW NOISE FIGURE: NF = 1.4 dB TYP at f = at 12 GHz Noise .

NE677M04 - NECs MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR (CEL)
.. NEC's MEDIUM POWER NPN SILICON HIGH FREQUENCY NE677M04 TRANSISTOR FEATURES • • • • HIGH GAIN BANDWIDTH: fT = 15 GHz HIGH OUTPUT P.

NE600 - 1GHz LNA and mixer (NXP Semiconductors)
Philips Semiconductors Product specification 1GHz LNA and mixer NE/SA600 DESCRIPTION The NE/SA600 is a bined low noise amplifier (LNA) and mixe.

NE602 - NE602 (ETC)
http://.. .

NE602 - Double-Balanced Mixer and Oscillator (Philips)
NEjSA602 Double-Balanced Mixer and Oscillator Product Specification DESCRIPTION The SA/NE602 is a low-power VHF monolithic double-balanced mixer with.

NE602A - Double-Balanced Mixer and Oscillator (Philips)
.