NE678M04 Datasheet (NEC) - MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR

NE678M04, MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR

The NE678M04 is fabricated using NEC's HFT3 wafer process.

With a transition frequency of 12 GHz, the NE678M04 is usable in applications from 100 MHz to 3 GHz.

The NE678M04 provides P1dB of 18 dBm, even with low voltage and low current, making this device an excellent choice for the driver stage for

NE678M04 Features

* HIGH GAIN BANDWIDTH: fT = 12 GHz HIGH OUTPUT POWER: P-1dB = 18 dBm at 1.8 GHz HIGH LINEAR GAIN: GL = 13 dB at 1.8 GHz NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance +0.40-0.05 2 +0.30