NE677M04 Datasheet - CEL

NECs MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR

NE677M04 Features

* HIGH GAIN BANDWIDTH: fT = 15 GHz HIGH OUTPUT POWER: P-1dB = 15 dBm at 1.8 GHz HIGH LINEAR GAIN: GL = 15.5 dB at 1.8 GHz NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance +0.40-0.05 2 +0.30

NE677M04 General Description

NEC's NE677M04 is fabricated using NEC's HFT3 wafer process. With a transition frequency of 15 GHz, the NE677M04 is usable in applications from 100 MHz to 3 GHz. The NE677M04 provides P1dB of 15 dBm, even with low voltage and low current, making this device an excellent choice for the driver stage f.

NE677M04 Datasheet (89.90 KB)

NE677M04 Datasheet Preview — Preview of NE677M04 PDF

Datasheet Details

Part number:

NE677M04

Manufacturer:

CEL

File Size:

89.90 KB

Description:

Necs medium power npn silicon high frequency transistor.

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NE677M04 NECs MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR CEL

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NE677M04 Features

NE677M04 General Description

Datasheet Details

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