NE677M04 Datasheet - CEL

NE677M04 NECs MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR

NEC's NE677M04 is fabricated using NEC's HFT3 wafer process. With a transition frequency of 15 GHz, the NE677M04 is usable in applications from 100 MHz to 3 GHz. The NE677M04 provides P1dB of 15 dBm, even with low voltage and low current, making this device an excellent choice for the driver stage f.

NE677M04 Features

* HIGH GAIN BANDWIDTH: fT = 15 GHz HIGH OUTPUT POWER: P-1dB = 15 dBm at 1.8 GHz HIGH LINEAR GAIN: GL = 15.5 dB at 1.8 GHz NEW LOW PROFILE M04 PACKAGE: SOT-343 footprint, with a height of only 0.59 mm Flat lead style for better RF performance +0.40-0.05 2 +0.30

NE677M04_CEL.pdf

NE677M04 Datasheet Preview — Preview of NE677M04 PDF

Datasheet Details

Part number:

NE677M04

Manufacturer:

CEL

File Size:

89.90 KB

Description:

Necs medium power npn silicon high frequency transistor.

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NE677M04 NE677M04 NECs MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR CEL

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