NE94433
NEC
58.28kb
Npn silicon oscillator and mixer transistor. The NE944 series of NPN silicon epitaxial bipolar transistors is intended for use in general purpose UHF oscillator and mixer applica
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NE94430 - NPN SILICON OSCILLATOR AND MIXER TRANSISTOR
(NEC)
NPN SILICON OSCILLATOR AND MIXER TRANSISTOR
FEATURES
• LOW COST • HIGH GAIN BANDWIDTH PRODUCT: fT = 2000 MHz TYP • LOW COLLECTOR TO BASE TIME CONSTANT.
NE944 - NPN SILICON OSCILLATOR AND MIXER TRANSISTOR
(NEC)
NPN SILICON OSCILLATOR AND MIXER TRANSISTOR
FEATURES
• LOW COST • HIGH GAIN BANDWIDTH PRODUCT: fT = 2000 MHz TYP • LOW COLLECTOR TO BASE TIME CONSTANT.
NE9000xx - (NE9000/1/2 Series) Ku-Band Medium Power GaAs MESFET
(NEC Electronics)
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NE900175 - (NE9000/1/2 Series) Ku-Band Medium Power GaAs MESFET
(NEC Electronics)
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NE9001xx - (NE9000/1/2 Series) Ku-Band Medium Power GaAs MESFET
(NEC Electronics)
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NE9002xx - (NE9000/1/2 Series) Ku-Band Medium Power GaAs MESFET
(NEC Electronics)
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NE960R2 - 0.2 W X / Ku-BAND POWER GaAs MES FET
(NEC)
PRELIMINARY DATA SHEET
N-CHANNEL GaAs MES FET
NE960R2 SERIES
0.2 W X, Ku-BAND POWER GaAs MES FET
DESCRIPTION
The NE960R2 Series are 0.2 W GaAs MES .
NE960R200 - 0.2 W X / Ku-BAND POWER GaAs MES FET
(NEC)
PRELIMINARY DATA SHEET
N-CHANNEL GaAs MES FET
NE960R2 SERIES
0.2 W X, Ku-BAND POWER GaAs MES FET
DESCRIPTION
The NE960R2 Series are 0.2 W GaAs MES .
NE960R275 - 0.2 W X / Ku-BAND POWER GaAs MES FET
(NEC)
PRELIMINARY DATA SHEET
N-CHANNEL GaAs MES FET
NE960R2 SERIES
0.2 W X, Ku-BAND POWER GaAs MES FET
DESCRIPTION
The NE960R2 Series are 0.2 W GaAs MES .
NE960R5 - 0.5 W X / Ku-BAND POWER GaAs MES FET
(NEC)
PRELIMINARY DATA SHEET
N-CHANNEL GaAs MES FET
NE960R5 SERIES
0.5 W X, Ku-BAND POWER GaAs MES FET
DESCRIPTION
The NE960R5 Series are 0.5 W GaAs MES .