NE960R200 Datasheet, Fet, NEC

NE960R200 Features

  • Fet
  • High Output Power
  • High Linear Gain : Po (1 dB) = +25.0 dBm TYP. : 10.0 dB TYP.
  • High Power Added Efficiency: 35 % TYP. @V DS = 9 V, IDset = 90 mA, f = 14.5

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Part number:

NE960R200

Manufacturer:

NEC

File Size:

62.85kb

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📄 Datasheet

Description:

0.2 w x / ku-band power gaas mes fet. The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication s

Datasheet Preview: NE960R200 📥 Download PDF (62.85kb)
Page 2 of NE960R200 Page 3 of NE960R200

NE960R200 Application

  • Applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power (CW) with high linear gain, high ef

TAGS

NE960R200
0.2
Ku-BAND
POWER
GaAs
MES
FET
NEC

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