NE960R275 Datasheet (NEC) - 0.2 W X / Ku-BAND POWER GaAs MES FET

NE960R275, 0.2 W X / Ku-BAND POWER GaAs MES FET

The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems.

It is capable of delivering 0.2 watt of output power (CW) with high linear gain, high efficiency and low distortion and are suitable as driver amplifiers for o

NE960R275 Features

* High Output Power

* High Linear Gain : Po (1 dB) = +25.0 dBm TYP. : 10.0 dB TYP.

* High Power Added Efficiency: 35 % TYP. @V DS = 9 V, IDset = 90 mA, f = 14.5 GHz ORDERING INFORMATION Part Number NE960R200 NE961R200 NE960R275 75 Package 00 (CHIP) Supplying Form ESD protec