NE960R275 0.2 W X / Ku-BAND POWER GaAs MES FET

NEC

Description

PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE960R2 SERIES 0.2 W X, Ku-BAND POWER GaAs MES FET .
The NE960R2 Series are 0.

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Datasheet Specifications

Part number: NE960R275
Manufacturer: NEC
File Size: 62.85 KB
Datasheet: NE960R275_NEC.pdf
Description: 0.2 W X / Ku-BAND POWER GaAs MES FET

Features

* High Output Power
* High Linear Gain : Po (1 dB) = +25.0 dBm TYP. : 10.0 dB TYP.
* High Power Added Efficiency: 35 % TYP. @V DS = 9 V, IDset = 90 mA, f = 14.5 GHz ORDERING INFORMATION Part Number NE960R200 NE961R200 NE960R275 75 Package 00 (CHIP) Supplying Form ESD protec

Applications

* for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power (CW) with high linear gain, high efficiency and low distortion and are suitable as driver amplifiers for our X, Ku-band NEZ Series amplifiers etc. The NE961R200 and the NE960R200 are available in chip

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NE960R275 0.2 Ku-BAND POWER GaAs MES FET NEC

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