NE960R575 0.5 W X / Ku-BAND POWER GaAs MES FET

NEC

Description

PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE960R5 SERIES 0.5 W X, Ku-BAND POWER GaAs MES FET .
The NE960R5 Series are 0.

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Datasheet Specifications

Part number: NE960R575
Manufacturer: NEC
File Size: 62.17 KB
Datasheet: NE960R575_NEC.pdf
Description: 0.5 W X / Ku-BAND POWER GaAs MES FET

Features

* High Output Power
* High Linear Gain : Po (1 dB) = +27.5 dBm TYP. : 9.0 dB TYP.
* High Power Added Efficiency: 30 % TYP. @V DS = 9 V, IDset = 180 mA, f = 14.5 GHz ORDERING INFORMATION Part Number NE960R500 NE961R500 NE960R575 NE962R575 75 Package 00 (CHIP) Supplying Form

Applications

* for X, Kuband microwave communication systems. It is capable of delivering 0.5 watt of output power (CW) with high linear gain, high efficiency and low distortion and are suitable as driver amplifiers for our X, Ku-band NEZ Series amplifiers etc. The NE961R500 and the NE960R500 are available in chip

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NE960R575 0.5 Ku-BAND POWER GaAs MES FET NEC

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