NE960R575 Datasheet - NEC

0.5 W X / Ku-BAND POWER GaAs MES FET

NE960R575 Features

* High Output Power

* High Linear Gain : Po (1 dB) = +27.5 dBm TYP. : 9.0 dB TYP.

* High Power Added Efficiency: 30 % TYP. @V DS = 9 V, IDset = 180 mA, f = 14.5 GHz ORDERING INFORMATION Part Number NE960R500 NE961R500 NE960R575 NE962R575 75 Package 00 (CHIP) Supplying Form

NE960R575 General Description

The NE960R5 Series are 0.5 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.5 watt of output power (CW) with high linear gain, high efficiency and low distortion and are suitable as driver amplifiers for o.

NE960R575 Datasheet (62.17 KB)

NE960R575 Datasheet Preview — Preview of NE960R575 PDF

Datasheet Details

Part number:

NE960R575

Manufacturer:

NEC

File Size:

62.17 KB

Description:

0.5 w x / ku-band power gaas mes fet.

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NE960R575 0.5 Ku-BAND POWER GaAs MES FET NEC

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NE960R575 Features

NE960R575 General Description

Datasheet Details

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NE960R575 Distributor