NE960R2 Datasheet - NEC

0.2 W X / Ku-BAND POWER GaAs MES FET

NE960R2 Features

* High Output Power

* High Linear Gain : Po (1 dB) = +25.0 dBm TYP. : 10.0 dB TYP.

* High Power Added Efficiency: 35 % TYP. @V DS = 9 V, IDset = 90 mA, f = 14.5 GHz ORDERING INFORMATION Part Number NE960R200 NE961R200 NE960R275 75 Package 00 (CHIP) Supplying Form ESD protec

NE960R2 General Description

The NE960R2 Series are 0.2 W GaAs MES FETs designed for middle power transmitter applications for X, Kuband microwave communication systems. It is capable of delivering 0.2 watt of output power (CW) with high linear gain, high efficiency and low distortion and are suitable as driver amplifiers for o.

NE960R2 Datasheet (62.85 KB)

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Datasheet Details

Part number:

NE960R2

Manufacturer:

NEC

File Size:

62.85 KB

Description:

0.2 w x / ku-band power gaas mes fet.

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NE960R2 0.2 Ku-BAND POWER GaAs MES FET NEC

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NE960R2 Features

NE960R2 General Description

Datasheet Details

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NE960R2 Distributor