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NEL200101-24

NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier

NEL200101-24 Features

* φ 7 ±0.3

* High Linear Power and Gain

* Low Internal Modulation Distortion

* High Reliability Gold Metallization

* 24 V Operation 1.6 ±0.3 2 2 ±0.2

* Emitter Ballasting 0.1

* 0.04 +0.06 3.0 6.2 ±0.2 1 1 - EMITTER 2 - BASE 3 - COLLECTOR ABSOLUTE

NEL200101-24 General Description

AND APPLICATIONS NEL2001012-24 of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications. It incorporates emitter ballast resistors, gold metallizations and offers a high degree of reliability. OUTLINE DIMENSIONS (Unit: mm) 1.0 MIN. 1.0 MIN. 0.2 1..

NEL200101-24 Datasheet (88.48 KB)

Preview of NEL200101-24 PDF

Datasheet Details

Part number:

NEL200101-24

Manufacturer:

NEC

File Size:

88.48 KB

Description:

Npn silicon epitaxial transistor l band power amplifier.

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NEL200101-24 NPN SILICON EPITAXIAL TRANSISTOR Band Power Amplifier NEC

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