NEL200101-24 - NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier

NEC

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Datasheet Details

Part number	NEL200101-24
Manufacturer	NEC
File Size	88.48 KB
Description	NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier
Datasheet	NEL200101-24_NEC.pdf

NEL200101-24 Product details

Description

AND APPLICATIONS NEL2001012-24 of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications.It incorporates emitter ballast resistors, gold metallizations and offers a high degree of reliability.OUTLINE DIMENSIONS (Unit: mm) 1.0 MIN.1.0 MIN.0.2 1.2 0.1 +0.2 1.5 ±0.2 3

Features

φ 7 ±0.3.
High Linear Power and Gain.
Low Internal Modulation Distortion.
High Reliability Gold Metallization.
24 V Operation 1.6 ±0.3 2 2 ±0.2.
Emitter Ballasting 0.1.
0.04 +0.06 3.0 6.2 ±0.2 1 1 -.

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Published: May 7, 2005 |