NEL200101-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier

NEC

Description

DATA SHEET SILICON POWER TRANSISTOR NEL200101-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier .
AND APPLICATIONS NEL2001012-24 of NPN epitaxial microwave power transistors is designed for 1.

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Datasheet Specifications

Part number: NEL200101-24
Manufacturer: NEC
File Size: 88.48 KB
Datasheet: NEL200101-24_NEC.pdf
Description: NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier

Features

* φ 7 ±0.3
* High Linear Power and Gain
* Low Internal Modulation Distortion
* High Reliability Gold Metallization
* 24 V Operation 1.6 ±0.3 2 2 ±0.2
* Emitter Ballasting 0.1
* 0.04 +0.06 3.0 6.2 ±0.2 1 1 - EMITTER 2 - BASE 3 - COLLECTOR ABSOLUTE

Applications

* NEL2001012-24 of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications. It incorporates emitter ballast resistors, gold metallizations and offers a high degree of reliability. OUTLINE DIMENSIONS (Unit: mm) 1.0 MIN. 1.0 MIN. 0.2 1.2
* 0.1 +0

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