NEL200101-24 Datasheet - NEC

NEL200101-24 - NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier

AND APPLICATIONS NEL2001012-24 of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications. It incorporates emitter ballast resistors, gold metallizations and offers a high degree of reliability. OUTLINE DIMENSIONS (Unit: mm) 1.0 MIN. 1.0 MIN. 0.2 1..

NEL200101-24 Features

* φ 7 ±0.3

* High Linear Power and Gain

* Low Internal Modulation Distortion

* High Reliability Gold Metallization

* 24 V Operation 1.6 ±0.3 2 2 ±0.2

* Emitter Ballasting 0.1

* 0.04 +0.06 3.0 6.2 ±0.2 1 1 - EMITTER 2 - BASE 3 - COLLECTOR ABSOLUTE

NEL200101-24_NEC.pdf