NEL2035F03-24 - NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier

NEC

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Datasheet Details

Part number	NEL2035F03-24
Manufacturer	NEC
File Size	107.45 KB
Description	NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier
Datasheet	NEL2035F03-24_NEC.pdf

NEL2035F03-24 Product details

Description

AND APPLICATIONS NEL2035F03-24 of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications.It incorporates emitter ballast resistors, gold metallizations and offers a high degree of reliability.OUTLINE DIMENSIONS (Unit: mm) 2.8 ±0.2 2 × φ 3.3 ±0.3 6.35 ±0.4 1.53 ±0.3 1

Features

High Linear Power and Gain.
Low Internal Modulation Distortion.
High Reliability Gold Metallization.
Emitter Ballasting.
24 V Operation 3 2.17 ±0.3 0.1 +0.05.
0.02 1 -.

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Published: May 7, 2005 |