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NEL2035F03-24

NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier

NEL2035F03-24 Features

* High Linear Power and Gain

* Low Internal Modulation Distortion

* High Reliability Gold Metallization

* Emitter Ballasting

* 24 V Operation 3 2.17 ±0.3 0.1 +0.05

* 0.02 1 - EMITTER 2 - BASE 3 - COLLECTOR ABSOLUTE MAXIMUM RATING (TA = 25 ˚C) PARAME

NEL2035F03-24 General Description

AND APPLICATIONS NEL2035F03-24 of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications. It incorporates emitter ballast resistors, gold metallizations and offers a high degree of reliability. OUTLINE DIMENSIONS (Unit: mm) 2.8 ±0.2 2 × φ 3.3 ±0.3 .

NEL2035F03-24 Datasheet (107.45 KB)

Preview of NEL2035F03-24 PDF

Datasheet Details

Part number:

NEL2035F03-24

Manufacturer:

NEC

File Size:

107.45 KB

Description:

Npn silicon epitaxial transistor l band power amplifier.

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NEL2035F03-24 NPN SILICON EPITAXIAL TRANSISTOR Band Power Amplifier NEC

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