NEL2035F03-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier

NEC

Description

DATA SHEET SILICON POWER TRANSISTOR NEL2035F03-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier .
AND APPLICATIONS NEL2035F03-24 of NPN epitaxial microwave power transistors is designed for 1.

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Datasheet Specifications

Part number: NEL2035F03-24
Manufacturer: NEC
File Size: 107.45 KB
Datasheet: NEL2035F03-24_NEC.pdf
Description: NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier

Features

* High Linear Power and Gain
* Low Internal Modulation Distortion
* High Reliability Gold Metallization
* Emitter Ballasting
* 24 V Operation 3 2.17 ±0.3 0.1 +0.05
* 0.02 1 - EMITTER 2 - BASE 3 - COLLECTOR ABSOLUTE MAXIMUM RATING (TA = 25 ˚C) PARAME

Applications

* NEL2035F03-24 of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications. It incorporates emitter ballast resistors, gold metallizations and offers a high degree of reliability. OUTLINE DIMENSIONS (Unit: mm) 2.8 ±0.2 2 × φ 3.3 ±0.3 6.35 ±0.4 1.53 ±

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