NEL2012F03-24 Datasheet, Amplifier, NEC

NEL2012F03-24 Features

• Amplifier High Linear Power and Gain Low Internal Modulation Distortion High Reliability Gold Metalization Emitter Ballasting 24 V Operation APPLICATION Digital Cellular : PCN/PCS etc. Digital C

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Part number:

NEL2012F03-24

Manufacturer:

NEC

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108.66kb

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📄 Datasheet

Description:

Npn silicon epitaxial transistor l band power amplifier. The NEL2012F03-24 of NPN epitaxial microwave power transistors is designed for 1.8 GHz-2.0 GHz PCN/PCS/ PHS base station applications

NEL2012F03-24 Application

• Applications It is corporate emitter ballast resistors, gold metalizations and offers a high degree of reliability. FEATURES High Linear Power and

TAGS

NEL2012F03-24

NEC

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