NEL2004F02-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier

NEC

Description

DATA SHEET SILICON POWER TRANSISTOR NEL2004F02-24 NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier .
AND APPLICATIONS NEL2004F02-24 of NPN epitaxial microwave power transistors is designed for 1.

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Datasheet Specifications

Part number: NEL2004F02-24
Manufacturer: NEC
File Size: 89.27 KB
Datasheet: NEL2004F02-24_NEC.pdf
Description: NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier

Features

* High Linear Power and Gain 4.2 ±0.4 0.1 +0.05
* 0.02 1 1 3 3.6 ±0.5 3.6 ±0.5 12.4 ±0.2 9.2 ±0.2 4.6 ±0.2
* Low Internal Modulation Distortion
* High Reliability Gold Metallization
* Emitter Ballasting
* 24 V Operation 1 - EMITTER 2 - BASE 3 - COLLE

Applications

* NEL2004F02-24 of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications. It incorporates emitter ballast resistors, gold metallizations and offers a high degree of reliability. OUTLINE DIMENSIONS (Unit: mm) 2 2 ±0.2 3 ±0.2 2 ±0.2 2 × φ 3.2 ±0.3 1 1

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