NEL2004F02-24 Datasheet - NEC

NEL2004F02-24 - NPN SILICON EPITAXIAL TRANSISTOR L Band Power Amplifier

AND APPLICATIONS NEL2004F02-24 of NPN epitaxial microwave power transistors is designed for 1.8-2 GHz PHS/PCN/PCS base station applications.

It incorporates emitter ballast resistors, gold metallizations and offers a high degree of reliability.

OUTLINE DIMENSIONS (Unit: mm) 2 2 ±0.2 3 ±0.2 2 ±0.2 2

NEL2004F02-24 Features

* High Linear Power and Gain 4.2 ±0.4 0.1 +0.05

* 0.02 1 1 3 3.6 ±0.5 3.6 ±0.5 12.4 ±0.2 9.2 ±0.2 4.6 ±0.2

* Low Internal Modulation Distortion

* High Reliability Gold Metallization

* Emitter Ballasting

* 24 V Operation 1 - EMITTER 2 - BASE 3 - COLLE

Datasheet Details

NEL2004F02-24

NEC

89.27 KB

Npn silicon epitaxial transistor l band power amplifier.

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