UPA2724UT1A

MOS FIELD EFFECT TRANSISTOR

NEC

* Low on-state resistance RDS(on)1 = 3.3 mΩ MAX. (VGS = 10 V, ID = 15 A) RDS(on)2 = 5.0 mΩ MAX. (VGS = 4.5 V, ID = 15 A)

* Low input capacitance Ciss = 4400 pF TYP. (VDS = 15 V, VGS = 0 V)

* Thin type surface mount package with heat spreader (8-pin HVSON)

* RoHS Compl

UPA2724UT1A

NEC

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Mos field effect transistor.

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UPA2724UT1A MOS FIELD EFFECT TRANSISTOR NEC

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