UPA2727UT1A Datasheet - NEC

UPA2727UT1A, MOS FIELD EFFECT TRANSISTOR

www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR μ PA2727UT1A SWITCHING N-CHANNEL POWER MOSFET .
The μ PA2727UT1A is N-channel MOSFET designed for DC/DC converter applications. Low on-state resistance RD.

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UPA2727UT1A_NEC.pdf

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Datasheet Details

Part number:

UPA2727UT1A

Manufacturer:

NEC

File Size:

199.04 KB

Description:

MOS FIELD EFFECT TRANSISTOR

Features

* 1 8 0.10 S 0.10 M 0 +0.05
* 0 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected. ) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 Note2 Note2 1 0.2 4.1 ±0.2 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg

Applications

* PACKAGE DRAWING (Unit: mm) 1.27
* Low on-state resistance RDS(on)1 = 9.6 mΩ MAX. (VGS = 10 V, ID = 8 A) 0.42
* 0.05 3 4 +0.1 6 5 6 ±0.2 5.4 ±0.2 RDS(on)2 = 15 mΩ MAX. (VGS = 4.5 V, ID = 8 A)
* Low QGD QGD = 3.5 nC TYP. (VDD = 15 V, ID = 16 A)
* Thin type surface

UPA2727UT1A Distributors

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UPA2727UT1A MOS FIELD EFFECT TRANSISTOR NEC

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