UPA2727UT1A Datasheet, Transistor, NEC

UPA2727UT1A Features

• Transistor 1 8 0.10 S 0.10 M 0 +0.05
• 0 ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain

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UPA2727UT1A

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NEC

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📄 Datasheet

Description:

Mos field effect transistor. The μ PA2727UT1A is N-channel MOSFET designed for DC/DC converter applications. PACKAGE DRAWING (Unit: mm) 1.27 Low on-st

UPA2727UT1A Application

• Applications PACKAGE DRAWING (Unit: mm) 1.27
• Low on-state resistance RDS(on)1 = 9.6 mΩ MAX. (VGS = 10 V, ID = 8 A) 0.42
• 0.05

TAGS

UPA2727UT1A

NEC

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