S7B163635M Datasheet - NETSOL

S7B163635M 512Kx36 & 1Mx18 Flow-Through SRAM

The S7B163635M and S7B161835M are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance. It is organized as 512K(1M) words of 36(18) bits and integrates address and control registers, a 2-bit burst address counter and added some new functions for high performance appli.

S7B163635M SS77BB116613863355MM S7B161835M 512Kx36 & 1Mx18 Flow-Through SRAM 512Kx36 & 1Mx18 Flow-Through SRAM 18Mb Sync. Flow-Through SRAM Specification NETSOL RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind. This document and all information discussed herein remain the sole and exc.

S7B163635M Features

* VDD = 2.5V(2.3V ~ 2.7V) or 3.3V(3.1V ~ 3.5V) Power Supply

* VDDQ = 2.3V~2.7V I/O Power Supply (VDD=2.5V) or 2.3V~3.5V I/O Power Supply (VDD=3.3V)

* Synchronous Operation

* Self-Timed Write Cycle

* On-Chip Address Counter and Control Registers

* Byte

S7B163635M Datasheet (490.50 KB)