S7B321835M Description
S7B323635M SS77BB332213863355MM S7B321835M 1Mx36 & 2Mx18 Flow-Trough SRAM 1Mx36 & 2Mx18 Flow-Trough SRAM 36Mb Sync.Flow-Trough SRAM Specification .
The S7B323635M and S7B321835M are 37,748,736-bit Synchronous Static Random Access Memory designed for high performance.
S7B321835M Features
* VDD = 1.8V (1.7V ~ 2.0V) or 2.5V (2.3V ~ 2.7V) or 3.3V (3.1V ~ 3.5V) Power Supply
* VDDQ = 1.7V ~ 2.0V I/O Power Supply (VDD=1.8V) or 2.3V ~ 2.7V I/O Power Supply (VDD=2.5V) or 2.3V ~ 3.5V I/O Power Supply (VDD=3.3V)
* Synchronous Operation
* Self-Timed Write Cycle
S7B321835M Applications
* GW, BW, LBO, ZZ. Write cycles are internally self-timed and synchronous. Full bus-width write is done by GW, and each byte write is performed by the combination of WEx and BW when GW is high. And with CS1 high, ADSP is blocked to control signals. Burst cycle can be initiated with either the address
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