S7B641835M, S7B643635M Datasheet - NETSOL

S7B641835M, S7B643635M, 2Mx36 & 4Mx18 Flow-Trough SRAM

S7B643635M SS77BB664413863355MM S7B641835M 2Mx36 & 4Mx18 Flow-Trough SRAM 2Mx36 & 4Mx18 Flow-Trough SRAM 72Mb Sync.Flow-Trough SRAM Specification .
The S7B643635M and S7B641835M are 75,497,472-bit Synchronous Static Random Access Memory designed for high performance.

Features

* VDD = 2.5V(2.3V ~ 2.7V) or 3.3V(3.1V ~ 3.5V) Power Supply
* VDDQ = 2.3V~2.7V I/O Power Supply (VDD=2.5V) or 2.3V~3.5V I/O Power Supply (VDD=3.3V)
* Synchronous Operation
* Self-Timed Write Cycle
* On-Chip Address Counter and Control Registers
* Byte

Applications

* GW, BW, LBO, ZZ. Write cycles are internally self-timed and synchronous. Full bus-width write is done by GW, and each byte write is performed by the combination of WEx and BW when GW is high. And with CS1 high, ADSP is blocked to control signals. Burst cycle can be initiated with either the address

S7B643635M-NETSOL.pdf