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S7B801835M, S7B803635M - 256Kx36 & 512Kx18 Flow-Through SRAM

S7B801835M Description

S7B803635M SS77BB880013863355MM S7B801835M 256Kx36 & 512Kx18 Flow-Through SRAM 256Kx36 & 512Kx18 Flow-Through SRAM 9Mb Sync.Flow-Through SRAM Speci.
The S7B803635M and S7B801835M are 9,437,184-bit Synchronous Static Random Access Memory designed for high performance.

S7B801835M Features

* VDD = 2.5V(2.3V ~ 2.7V) or 3.3V(3.1V ~ 3.5V) Power Supply
* VDDQ = 2.3V~2.7V I/O Power Supply (VDD=2.5V) or 2.3V~3.5V I/O Power Supply (VDD=3.3V)
* Synchronous Operation
* Self-Timed Write Cycle
* On-Chip Address Counter and Control Registers
* Byte

S7B801835M Applications

* GW, BW, LBO, ZZ. Write cycles are internally selftimed and synchronous. Full bus-width write is done by GW, and each byte write is performed by the combination of WEx and BW when GW is high. And with CS1 high, ADSP is blocked to control signals. Burst cycle can be initiated with either the address

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: S7B801835M, S7B803635M. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
S7B801835M, S7B803635M
Manufacturer
NETSOL
File Size
488.34 KB
Datasheet
S7B803635M-NETSOL.pdf
Description
256Kx36 & 512Kx18 Flow-Through SRAM
Note
This datasheet PDF includes multiple part numbers: S7B801835M, S7B803635M.
Please refer to the document for exact specifications by model.

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NETSOL S7B801835M-like datasheet