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P8010BI, P8010BI-NIKO Datasheet - NIKO-SEM

P8010BI N-Channel Enhancement Mode Field Effect Transistor

NIKO-SEM N-Channel Enhancement Mode P8010BI Field Effect Transistor TO-251 Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 85mΩ ID 15A D G S 12 3 1. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current1 Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range TC = 25 °C TC = 100 .

P8010BI-NIKO-SEM.pdf

This datasheet PDF includes multiple part numbers: P8010BI, P8010BI-NIKO. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number:

P8010BI, P8010BI-NIKO

Manufacturer:

NIKO-SEM

File Size:

303.46 KB

Description:

N-channel enhancement mode field effect transistor.

Note:

This datasheet PDF includes multiple part numbers: P8010BI, P8010BI-NIKO.
Please refer to the document for exact specifications by model.

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TAGS

P8010BI P8010BI-NIKO N-Channel Enhancement Mode Field Effect Transistor NIKO-SEM

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