P8010BV Datasheet - UNIKC

P8010BV N-Channel MOSFET

P8010BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 85mΩ @VGS = 10V ID 3.5A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 3.5 2.8 20 Avalanche Current IAS 12 Avalanche Energy L =0.1mH EAS 7.2 Power Dissipation TA = 25 °C TA = 70 °C PD 2.4 1.5 Junc.

P8010BV Datasheet (398.24 KB)