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KSD5060 Silicon NPN Power Transistor

KSD5060 Description

-/ 20 STERN AVE.SPRINGFIELD, NEW JERSEY 07081 U.S.A.10 ducts., Una.Silicon NPN Power Transistor TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (97.
High Breakdown Voltage- : VCBO= 1500V(Min). High Switching Speed. High Reliability. Built-in Damper Diode APPLIC.

KSD5060 Applications

* Designed for color TV horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V Ic Collector Current- Continuous 2.5 A ICP Collector

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