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KSD5061 Silicon NPN Power Transistor

KSD5061 Description

Jsiizu ^smi-donauctoi LProaueti, Una.Cx t_/ 20 STERN AVE.SPRINGFIELD, NEW JERSEY 07081 U.S.A.TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973).
High Breakdown Voltage- : VCBO= 1500V (Min). High Switching Speed. High Reliability. Built-in Damper Diode APPLI.

KSD5061 Applications

* Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25'C) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V Ic Collector Current- Continuous 3.5 A ICP Collecto

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Silicon NPN Power Transistor NJS
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