Datasheet4U Logo Datasheet4U.com

KSD5065 Silicon NPN Power Transistor

KSD5065 Description

20 STERN AVE.SPRINGFIELD, NEW JERSEY 07081 U.S.A., Una.TELEPHONE: (973) 376-2922 (212)227-6005 FAX: (973) 376-8960 Silicon NPN Power Transistor .
High Breakdown Voltage- :VCBo=1500V(Min). High Switching Speed. High Reliability APPLICATIONS. Designed for colo.

KSD5065 Applications

* Designed for color TV horizontal output applications ABSOLUTE MAXIMUM RATINGS(Ta=25t:) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage 800 V 6 V Ic Collector Current- Continuous 3.5 A ICP Collect

📥 Download Datasheet

Preview of KSD5065 PDF
datasheet Preview Page 2

📁 Related Datasheet

  • KSD5000 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • KSD5001 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • KSD5002 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • KSD5003 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • KSD5004 - NPN Triple Diffused Planar Silicon Transistor (Samsung semiconductor)
  • KSD5005 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • KSD5006 - Silicon NPN Power Transistor (Inchange Semiconductor)
  • KSD5007 - Silicon NPN Power Transistor (Inchange Semiconductor)

📌 All Tags

NJS KSD5065-like datasheet