NSI6601 Datasheet - NOVOSENSE

NSI6601 - Single-Channel Isolated Gate Driver

10 6.1. INSULATION AND SAFETY RELATED SPECIFICATIONS 10 6.2. DIN VDE V 0884-11 (VDE V 0884-11): 2017-01 INSULATION CHARACTERISTICS FOR SOP8(150 MIL) PACKAGE 11 6.3. SAFETY LIMITING VALUES FOR SOP8(150 MIL) PACKAGE 12 6.4. REGULATORY INFORMATION FOR SOP8(150 MIL) PACKAGE 13 6.5. DIN VDE V 0884-11.

NSI6601 Single-Channel Isolated Gate Driver Datasheet (EN) 1.3 Product Overview The NSI6601 is a single-channel isolated gate driver designed to drive IGBTs, power MOSFETs and SiC MOSFETs in many applications. It provides split outputs that control the rise and fall time individually. It can source and sink 5A peak current. The NSI6601 is available in SOP8 or SOW8 package, which can support 3000VRMS or 5700VRMS isolation per UL1577. System robustness is supported by 150kV/μs minimum common-mode.

NSI6601 Features

* Isolated single-channel driver

* Input side supply voltage: 3.1V to 17V

* Driver side supply voltage: up to 32V with 9V and 13 UVLO options

* 5A peak source and sink output current

* High CMTI: ±150kV/μs

* 78ns typical propagation delay

* Operation ambient temperature:

NSI6601-NOVOSENSE.pdf