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NSI6601 - Single-Channel Isolated Gate Driver

Datasheet Summary

Description

6.1.

INSULATION AND SAFETY RELATED SPECIFICATIONS 10 6.2.

DIN VDE V 0884-11 (VDE V 0884-11): 2017-01 INSULATION CHARACTERISTICS FOR SOP8(150 MIL) PACKAGE 11 6.3.

Features

  • Isolated single-channel driver.
  • Input side supply voltage: 3.1V to 17V.
  • Driver side supply voltage: up to 32V with 9V and 13 UVLO options.
  • 5A peak source and sink output current.
  • High CMTI: ±150kV/μs.
  • 78ns typical propagation delay.
  • Operation ambient temperature: -40°C ~125°C.
  • AEC-Q100 Grade1 option.
  • RoHS & REACH Compliant: SOP8 SOW8 Safety Regulatory Approvals.
  • UL recognition: 3000VRMS SOP8 and 5700VRMS SOW8 for 1 minute per UL1577.
  • DIN V.

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Datasheet Details

Part number NSI6601
Manufacturer NOVOSENSE
File Size 1.49 MB
Description Single-Channel Isolated Gate Driver
Datasheet download datasheet NSI6601 Datasheet
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Full PDF Text Transcription

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NSI6601 Single-Channel Isolated Gate Driver Datasheet (EN) 1.3 Product Overview The NSI6601 is a single-channel isolated gate driver designed to drive IGBTs, power MOSFETs and SiC MOSFETs in many applications. It provides split outputs that control the rise and fall time individually. It can source and sink 5A peak current. The NSI6601 is available in SOP8 or SOW8 package, which can support 3000VRMS or 5700VRMS isolation per UL1577. System robustness is supported by 150kV/μs minimum common-mode transient immunity (CMTI). The driver operates with a maximum supply voltage of 32V, while the input-side accepts from 3.1V to 17V supply voltage. Under voltage lock-out (UVLO) protection is supported by all the power supply voltage pins.
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