NSM2012 Hall-Effect-Based Current Sensor IC

NOVOSENSE

Description

NSM2012 High-Accuracy, Hall-Effect-Based Current Sensor IC with Common-Mode Field Rejection in 3kV High-Isolation Datasheet (EN) 1.0 Product Overview.
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Datasheet Specifications

Part number: NSM2012
Manufacturer: NOVOSENSE
File Size: 1.51 MB
Datasheet: NSM2012-NOVOSENSE.pdf
Description: Hall-Effect-Based Current Sensor IC

Features

* High bandwidth and fast response time
* 400kHz bandwidth
* 1.5us response time
* High-precision current measurement
* Differential Hall sets can immune stray field
* High isolation level that meets UL standards
* Withstand isolation voltage (VISO): 3000Vrms
* Maximu

Applications

* NSM2012 can reach a working voltage of 600Vpk, and it can withstand 6kV surge voltage without adding any protection devices. Due to NSM2012 internal accurate temperature compensation algorithm and factory accuracy calibration, this current sensor can maintain good accuracy in the full temperature w

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NSM2012 Hall-Effect-Based Current Sensor NOVOSENSE

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