* High bandwidth and fast response time
* 400kHz bandwidth
* 1.5us response time
* High-precision current measurement
* Differential Hall sets can immune stray field
* High isolation level that meets UL standards
* Withstand isolation voltage (VISO): 3000Vrms
* Maximu
NSM2012
NOVOSENSE
1.51 MB
Hall-effect-based current sensor ic.
NSM2012 High-Accuracy, Hall-Effect-Based Current Sensor IC with
Common-Mode Field Rejection in 3kV High-Isolation Datasheet (EN) 1.0
Product Overview.
📁 Related Datasheet
NSM2015 - Hall-Effect-Based Current Sensor IC
(NOVOSENSE)
NSM2015 Hall-Effect-Based Current Sensor IC with Common-
Mode Field Rejection and Overcurrent protection
Datasheet (EN) 1.0
Product Overview
NSM2015 .
NSM2016 - Hall-Effect-Based Current Sensor IC
(NOVOSENSE)
NSM2016
Hall-Effect-Based Current Sensor IC with CommonMode Field Rejection and Overcurrent protection
Datasheet (CN) 1.0
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NSM21156DW6T1G - Dual Complementary Transistors
(ON Semiconductor)
NSM21156DW6T1G Dual Complementary Transistors
General Purpose PNP Transistor and NPN Transistors with Monolithic Bias Network
NSM21156DW6T1G contains .
NSM21356DW6T1G - Dual Complementary Transistors
(ON Semiconductor)
NSM21356DW6T1G Dual Complementary Transistors
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NSM21356DW6T1G contains .
NSM2416 - Alphanumeric Display
(National Semiconductor)
..
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NSM-1416 - Display
(National Semiconductor)
..
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NSM-1416 - (NSM1416 / NSM2416) Alphanumeric Display
(National Semiconductor)
..
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NSM-2416 - (NSM1416 / NSM2416) Alphanumeric Display
(National Semiconductor)
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