NTE99 Silicon NPN Transistor Darlington w/Base-Emitter Speed-up Diode

NTE Electronics

Description

NTE99 Silicon NPN Transistor Darlington w/Base *Emitter Speed *up Diode .
The NTE99 is a silicon NPN Darlington transistor in a TO3 type package designed for high. voltage, high. speed, power switching in indu.

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Datasheet Specifications

Part number: NTE99
Manufacturer: NTE Electronics
File Size: 27.66 KB
Datasheet: NTE99_NTEElectronics.pdf
Description: Silicon NPN Transistor Darlington w/Base-Emitter Speed-up Diode

Features

* D Fast Turn
* Off Times: 1.0µs (max) Inductive Crossover Time
* 20 Amps 2.5µs (max) Inductive Storage Time
* 20 Amps D Operating Temperature Range:
* 65° to +200°C Absolute Maximum Ratings: Collector
* Emitter Voltage, VCEO

NTE99 Distributors

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NTE99 Silicon NPN Transistor Darlington Base-Emitter Speed-up Diode NTE Electronics

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