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NTE99 Silicon NPN Transistor Darlington w/Base-Emitter Speed-up Diode

NTE99 Description

NTE99 Silicon NPN Transistor Darlington w/Base *Emitter Speed *up Diode .
The NTE99 is a silicon NPN Darlington transistor in a TO3 type package designed for high. voltage, high. speed, power switching in indu.

NTE99 Features

* D Fast Turn
* Off Times: 1.0µs (max) Inductive Crossover Time
* 20 Amps 2.5µs (max) Inductive Storage Time
* 20 Amps D Operating Temperature Range:
* 65° to +200°C Absolute Maximum Ratings: Collector
* Emitter Voltage, VCEO

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Datasheet Details

Part number
NTE99
Manufacturer
NTE Electronics
File Size
27.66 KB
Datasheet
NTE99_NTEElectronics.pdf
Description
Silicon NPN Transistor Darlington w/Base-Emitter Speed-up Diode

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📌 All Tags

Silicon NPN Transistor Darlington Base-Emitter Speed-up Diode NTE Electronics
NTE Electronics NTE99-like datasheet