2N3055 Datasheet, Transistor, NTE

2N3055 Features

• Transistor D DC Current Gain: hFE = 20
• 70 @ IC = 4A D Collector
• Emitter Saturation Voltage: VCE(sat) = 1.1V (Max) @ IC = 4A D Excellent Safe Operating Area Absolute Maximum Rat

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2N3055

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NTE

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📄 Datasheet

Description:

Silicon npn power transistor. The 2N3055 is a silicon NPN transistor in a TO3 type case designed for general purpose switching and amplifier applications. Featur

2N3055 Application

• Applications Features: D DC Current Gain: hFE = 20
• 70 @ IC = 4A D Collector
• Emitter Saturation Voltage: VCE(sat) = 1.1V (Max) @

TAGS

2N3055

NTE

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