2N5884 - Silicon Power Transistor

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NTE

2N5884 Silicon Power Transistor by NTE - Datasheet Preview — Datasheet preview – 2N5884

Datasheet Details

Part number	2N5884
Manufacturer	NTE
File Size	60.80 KB
Description	Silicon Power Transistor
Datasheet	2N5884 Datasheet
Additional preview pages of the 2N5884 datasheet.

Product details

Description

The 2N5884 (PNP) and 2N5886 (NPN) are silicon complementary transistors designed for use in general purpose power amplifier and switching applications.

Features

D Low Collector.
Emitter Saturation Voltage: VCE(sat) = 1V (Max) at IC = 15A D Excellent DC Current Gain: hFE = 20.
100 @ IC = 10A Absolute Maximum Ratings: Collector.
Emitter Voltage, VCEO.
. . . . 80V Collector.
Base Voltage, VCBO.
80V Emitter.
Base Voltage, VEBO.

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Published: Oct 25, 2016 |