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2N5886 - COMPLEMENTARY SILICON HIGH POWER TRANSISTORS

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Description

The 2N5886 is a silicon Epitaxial-Base NPN power transistor mounted in Jedec TO-3 metal case.

It is inteded for use in power linear amplifiers and switching applications.

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Datasheet Details

Part number 2N5886
Manufacturer STMicroelectronics
File Size 41.78 KB
Description COMPLEMENTARY SILICON HIGH POWER TRANSISTORS
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® 2N5886 HIGH CURRENT SILICON NPN POWER TRANSISTOR s s STMicroelectronics PREFERRED SALESTYPE HIGH CURRENT CAPABILITY APPLICATIONS GENERAL PURPOSE SWITCHING AND AMPLIFIER s LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT s 1 2 TO-3 DESCRIPTION The 2N5886 is a silicon Epitaxial-Base NPN power transistor mounted in Jedec TO-3 metal case. It is inteded for use in power linear amplifiers and switching applications. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T c ≤ 25 o C Storage Temperature Max. Operating Junction Temperature Value 80 80 5 25 50 7.
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