BU806
NTE
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Silicon npn transistor. The BU806 is a silicon epitaxial planer NPN power Darlington transistor in a TO
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BU800 - NPN Transistor
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isc Silicon NPN Power Transistor
DESCRIPTION ·High Breakdown Voltage-
: VCBO= 1500V (Min) ·Collector-Emitter Saturation Voltage-
: VCE(sat)= 5.0V(Max.
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Order this document by BU806/D
NPN Darlington Power Transistor
This Darlington transistor is a high voltage, .
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BU806 ® BU807
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BU806 - Silicon Darlington Power Transistors
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BU806
SILICON DARLINGTON POWER TRANSISTORS
They are silicon epitaxial planar NPN power transistors in Darlington configuration mounte.
BU806 - NPN SILICON DARLINGTON TRANSISTOR
(Central Semiconductor)
BU806 BU807
NPN SILICON DARLINGTON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR BU806 and BU807 types are N.
BU806 - Silicon NPN Darlington Power Transistor
(INCHANGE)
INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
isc Product Specification
BU806
DESCRIPTION ·High Voltage: VCEV= 400V(Min) ·Low S.
BU806 - MEDIUM Voltage & Fast Switching Darlington Transistor
(TGS)
TIGER ELECTRONIC CO.,LTD
MEDIUM Voltage & Fast Switching DarlingtonTransistor
Product specification
BU806
DESCRIPTION
The devices are silicon Epita.