D Low Noise: VNI = 0.8µVrms(Typ) D High Open Loop Voltage Gain: GVO = 92dB (Typ) D Low Distortion: THD = 0.1% (Max) at VOUT = 7Vrms, GV = 40dB, f= 1kHz Absolute Maximum
NTE108, NTE
NTE108 Silicon NPN Transistor High Frequency Amplifier
Description: The NTE108 is a silicon NPN transistor in a TO92 type case designed for low–noise,.
NTE1080, NTE
NTE1080 Integrated Circuit TV Video Processor
Features: D For Reverse AGC D Sufficient Gain and Quieting Sensitivity D Stable Gain Over the Wide Band .
NTE1087, NTE
NTE1087 Integrated Circuit Low Noise Preamp
Description: D General–Purpose Pre–Amplifier D Voltage Amplifier Application D Low Noise D Operates from a.
NTE1002, NTE
NTE1002 Integrated Circuit FM IF TV Amp
Features: D Excellent Limiting Characteristics D High Gain D High AM Rejection Ratio D Wide Band Amp Absolute .
NTE1003, NTE
NTE1003 Integrated Circuit FM/AM IF Amplifier
Description: The NTE1003 monolithic integrated circuit is a high grade FM/AM intermediate frequency ampl.
