NTE251 - Silicon Complementary Transistors

Name: NTE251
SKU: NTE251-463920

NTE

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Datasheet Details

Part number	NTE251
Manufacturer	NTE
File Size	26.19 KB
Description	Silicon Complementary Transistors
Datasheet	NTE251_NTEElectronics.pdf

NTE251 Product details

Description

The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general purpose amplifier and low frequency switching applications.

Features

D High DC Current Gain @ IC = 10A: hFE = 2400 Typ (NTE251) hFE = 4000 Typ (NTE252) D Collector.
Emitter Sustaining Voltage: VCEO(sus) = 100V Min D Monolithic Construction with Built.
In Base.
Emitter Shunt Resistors Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector.
Emitter Voltage, VCEO.
. . . 100V Collector.
Base Voltage, VCB.

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Published: May 9, 2005 |