NTE251 - Silicon Complementary Transistors
NTE251 Features
* D High DC Current Gain @ IC = 10A: hFE = 2400 Typ (NTE251) hFE = 4000 Typ (NTE252) D Collector
* Emitter Sustaining Voltage: VCEO(sus) = 100V Min D Monolithic Construction with Built
* In Base
* Emitter Shunt Resistors Absolute Maximum Ratings: (TA = +25°C unless otherwise specifi
