NTE251 Datasheet - NTE

NTE251 Silicon Complementary Transistors

NTE251 Features

* D High DC Current Gain @ IC = 10A: hFE = 2400 Typ (NTE251) hFE = 4000 Typ (NTE252) D Collector

* Emitter Sustaining Voltage: VCEO(sus) = 100V Min D Monolithic Construction with Built

* In Base

* Emitter Shunt Resistors Absolute Maximum Ratings: (TA = +25°C unless otherwise specifi

Datasheet Details

NTE251

NTE

26.19 KB

Silicon complementary transistors.

NTE251 Distributor

📁 Related Datasheet

NTE25 Silicon Complementary Transistors (NTE)

NTE250 Silicon Complementary Transistors (NTE)

NTE2501 Silicon Complementary Transistors (NTE)

NTE2502 Silicon Complementary Transistors (NTE)

NTE2503 Silicon NPN Transistor (NTE)

NTE2504 Silicon NPN Transistor (NTE)

NTE2505 Silicon NPN Transistor (NTE)

NTE2506 Silicon NPN Transistor (NTE)

TAGS

NTE251 NTE251 Silicon Complementary Transistors NTE