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NTE251 Silicon Complementary Transistors

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Description

NTE251 (NPN) & NTE252 (PNP) Silicon Complementary Transistors Darlington Power Amplifier .
The NTE251 (NPN) and NTE252 (PNP) are silicon complementary Darlington transistors in a TO3 type case designed for general. purpose amplifier.

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Datasheet Specifications

Part number
NTE251
Manufacturer
NTE
File Size
26.19 KB
Datasheet
NTE251_NTEElectronics.pdf
Description
Silicon Complementary Transistors

Features

* D High DC Current Gain @ IC = 10A: hFE = 2400 Typ (NTE251) hFE = 4000 Typ (NTE252) D Collector
* Emitter Sustaining Voltage: VCEO(sus) = 100V Min D Monolithic Construction with Built
* In Base
* Emitter Shunt Resistors Absolute Maximum Ratings: (TA = +25°C unless otherwise specifi

NTE251 Distributors

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NTE251 Silicon Complementary Transistors NTE
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