NTE2575 Features
* D High Collector Emitter Breakdown Voltage: VCEO = 120V Min D High Gain Bandwidth Product: fT = 400MHz Typ D Low Reverse Transfer Capacitance and Excellent High Frequency Characteristics: NTE2574: Cre = 2.7pF NTE2575: Cre = 4.0pF D Isolated TO220 Type Package Absolute Maximum Ratings: (TC = +25°C
Datasheet Details
NTE2575, NTE2574
NTE
22.06 KB
Complementary silicon transistors.
This datasheet PDF includes multiple part numbers: NTE2575, NTE2574.
Please refer to the document for exact specifications by model.
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NTE2575 Distributor
