Datasheet4U Logo Datasheet4U.com

NTE2716 Datasheet - NTE

NTE2716 Integrated Circuit NMOS / 16K UV Erasable PROM

The NTE2716 is a 16,384 *bit (2048 x 8 *bit) Erasable and Electrically Reprogrammable PROM in a 24 *Lead DIP type package designed for system debug usage and similar applications requiring nonvolatile memory that could be reprogrammed periodically. The transparent lid on the pa.

NTE2716 Features

* D Single 5V Power Supply D Automatic Power

* Down Mode (Standby) D Organized as 2048 Bytes of 8Bits D TTL Compatible During Read and Program D Access Time: 350ns D Output Enable Active Level is User Selectable Absolute Maximum Ratings: (Note 1) All Input or Output Voltages (with respect to VS

NTE2716 Datasheet (34.41 KB)

Preview of NTE2716 PDF
NTE2716 Datasheet Preview Page 2 NTE2716 Datasheet Preview Page 3

Datasheet Details

Part number:

NTE2716

Manufacturer:

NTE

File Size:

34.41 KB

Description:

Integrated circuit nmos / 16k uv erasable prom.

📁 Related Datasheet

NTE271 Silicon Complementary Transistors (NTE)

NTE27 Germanium PNP Transistor High Current / High Gain Amp (NTE)

NTE270 Silicon Complementary Transistors Darlington Power Amp / Switch (NTE)

NTE2708 Integrated Circuit NMOS / 8K UV EPROM / 450ns (NTE)

NTE272 Silicon Darlington Complementary Power Amplifiers (NTE)

NTE273 Silicon Darlington Complementary (NTE)

NTE2732A Integrated Circuit 32K (4K x 8) NMOS UV Erasable PROM (NTE)

NTE274 Silicon Complementary Transistors Darlington Power Amplifier / Switch (NTE)

TAGS

NTE2716 Integrated Circuit NMOS 16K Erasable PROM NTE

NTE2716 Distributor